roithner lasertechnik roithner lasertechnik a-1040 vienna, schoenbrunner strasse 7, austria tel: +43 -1- 586 52 43-0 fax: +43 -1- 586 52 43-44 e-mail: office@roithner-laser.com http://www.roithner-laser.com RLT8340MG technical data high power infrared laserdiode structure: algaas double heterostructure lasing wavelength: 830 nm typ. max. optical power: 40 mw, single mode package: 5.6 mm pin connection: 1) laserdiode cathode 2) laserdiode anode and photodiode cathode 3) photodiode anode maximum ratings (tc=25c) characteristic symbol rating unit optical output power p o 40 mw ld reverse voltage v r(ld) 2 v pd reverse voltage v r(pd) 30 v operating temperature t op -10 .. +50 c storage temperature t stg -40 .. +85 c optical-electrical characteristics (tc = 25c) characteristic symbol test condition min typ max unit threshold current i th cw 15 25 ma operation current i op p o = 40 mw 70 80 90 ma operation voltage v op p o = 40 mw 1.8 2.2 v lasing wavelength l p p o = 40 mw 820 830 840 nm beam divergence q // p o = 40 mw 8 10 11 beam divergence q ^ p o = 40 mw 25 31 40 monitor current i m p o = 40 mw, v r =5v 400 600 800 a note! laserdiode must be cooled!
|
